[1]官震,朱朋,叶迎华,等.Al/MoO3薄膜厚度对含能半导体桥发火特性的影响[J].爆破器材,2017,46(04):1-6.[doi:10.3969/j.issn.1001-8352.2017.04.001]
　GUAN Zhen,ZHU Peng,YE Yinghua,et al.Influence of Film Thickness of Al/MoO3 on Ignition Performance of Energetic Semiconductor Bridge[J].EXPLOSIVE MATERIALS,2017,46(04):1-6.[doi:10.3969/j.issn.1001-8352.2017.04.001]
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Al/MoO3薄膜厚度对含能半导体桥发火特性的影响()
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《爆破器材》[ISSN:1001-8352/CN:32-1163/TJ]

卷:
46
期数:
2017年04
页码:
1-6
栏目:
基础理论
出版日期:
2017-06-14

文章信息/Info

Title:
Influence of Film Thickness of Al/MoO3 on Ignition Performance of Energetic Semiconductor Bridge
文章编号:
5148
作者:
官震; 朱朋; 叶迎华; 沈瑞琪
南京理工大学化工学院(江苏南京,210094）
Author(s):
GUAN Zhen;  ZHU Peng;  YE Yinghua;  SHEN Ruiqi
School of Chemical Engineering, Nanjing university of Science and Technology (Jiangsu Nanjing, 210094)
关键词:
含能材料; Al/MoO3纳米含能复合薄膜; 含能半导体桥; 发火特性
Keywords:
energetic materials;  Al/MoO3 energetic multilayer nanofilms;  energetic semiconductor bridge;  firing performance
分类号:
TJ55；TJ450
DOI:
10.3969/j.issn.1001-8352.2017.04.001
文献标志码:
A
摘要:
使用微细加工技术在半导体桥上分别集成3 μm和6 μm厚度的Al/MoO3纳米含能复合薄膜，制备成含能半导体桥，并使用电容放电的激发方式，研究薄膜厚度对含能半导体桥发火特性的影响。研究发现，随着薄膜厚度的增加，含能半导体桥的临界发火时间和临界发火能量无显著性变化，电容放电的作用总时间、作用总能量和能量利用效率降低，能量输出效率显著增加。
Abstract:
Two types of energetic semiconductor bridges (ESCBs) embedded with 3 μm and 6 μm Al/MoO3 energetic multilayer nanofilms were prepared with microfabrication technique, respectively. An investigation for the influence of Al/MoO3 film thickness on ignition performance of ESCBs was performed. Results show that the critical ignition time and critical ignition energy of ESCBs have insignificant change. Total ignition time, total ignition energy and energy utilization efficiency decrease along with the increase of film thickness. However, the energy output efficiency increases along with the increase of film thickness.

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备注/Memo

备注/Memo:
收稿日期：2017-02-12
基金项目：国家自然科学基金青年基金资助项目（51201091）
作者简介：官震(1991－)，男，硕士研究生，主要从事纳米含能薄膜材料的研究。E-mail:542749852@qq.com
通信作者：朱朋(1978－)，男，博士，副教授，硕导，主要研究方向为火工品技术。E-mail:zhupeng@njust.edu.cn
更新日期/Last Update: 2017-06-13