[1]刘德虎①,周彬②,左成林②.压敏电阻用于SCB火工品静电安全性研究[J].爆破器材,2016,45(05):62-64.[doi:10.3969/j.issn.1001-8352.2016.05.013]
　LIU Dehu,ZHOU Bin,ZUO Chenglin.Research on the Electrostatic Safety of Semiconductor Bridge(SCB) Explosive Device with Varistor[J].EXPLOSIVE MATERIALS,2016,45(05):62-64.[doi:10.3969/j.issn.1001-8352.2016.05.013]
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压敏电阻用于SCB火工品静电安全性研究()
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《爆破器材》[ISSN:1001-8352/CN:32-1163/TJ]

卷:
45
期数:
2016年05
页码:
62-64
栏目:
安全与测试
出版日期:
2016-09-30

文章信息/Info

Title:
Research on the Electrostatic Safety of Semiconductor Bridge(SCB) Explosive Device with Varistor
文章编号:
5068
作者:
刘德虎①; 周彬②; 左成林②
①安徽红星机电科技有限公司（安徽合肥，231135）
②南京理工大学化工学院（江苏南京，210094）
Author(s):
LIU Dehu①;  ZHOU Bin②; ZUO Chenglin②
①Anhui Hongxing Mechanical and Electrical Technology Co., Ltd.(Anhui Hefei, 231135 )
②School of Chemical Engineering, Nanjing University of Science and Technology (Jiangsu Nanjing, 210094)
关键词:
半导体桥; 压敏电阻; 静电安全性
Keywords:
semiconductor bridge(SCB);  varistor;  electrostatic safety
分类号:
TJ450
DOI:
10.3969/j.issn.1001-8352.2016.05.013
文献标志码:
A
摘要:
为了提高半导体桥（SCB）火工品的静电安全性，利用贴片式压敏电阻优良的钳位电压能力对SCB火工品进行静电加固。恒流激励下发火试验结果显示，080C型压敏电阻对SCB火工品发火时间和爆发时间无显著影响；静电国军标条件下，SCB火工品均未发火，在静电美军标下全发火；080C型压敏电阻防护后，SCB火工品在美军标条件下均未发火，静电安全性得到了显著提高。因此，在不影响SCB火工品正常发火性能条件下，080C型压敏电阻能够显著提高SCB火工品的抗静电能力。
Abstract:
In order to improve the electrostatic safety of semiconductor bridge (SCB),the SMD varistor with excellent clamping voltage ability was used to reinforce SCB explosive device. Results under constant current excitation show that the ignition time and outbreak time of SCB with 080C Varistor have no significant changes. There is no ignition for SCB explosive device on the condition of electrostatic GJB, while fullignition occurs on the condition of electrostatic MJB. SCB explosive device with 080C Varistor has no ignition on the condition of electrostatic MJB, which indicates that static safety of SCB explosive device has been improved significantly. Therefore, 080C Varistor could improve the antistatic ability of SCB explosive device when it has no impacton SCB normal ignition performance.

参考文献/References:

［1］BICKES Jr R W, SCHWARZ A C. Semiconductor bridge(SCB) igniter:US4708060［P］.1987-11-24.
［2］BICKES R W, SCHLOBOHM S L. Transformer coupled semiconductor bridge igniter for low voltage ignition from a high voltage source［R］. SAND 90-0001C, 1990.
［3］MONK D, WOODBURY M B, HANSEN D D. Inflator initiator with zener diode electrostatic discharge protection:US5672841［P］.1997-09-30.
［4］周彬, 王林狮, 秦志春，等. 一种半导体桥火工品抗静电技术［J］. 火工品, 2010(2): 5-7.
ZHOU B,WANG L S, QIN Z C, et al.A method of antielectrostatic discharge for semiconductor bridge initiator［J］.Initiators and Pyrotechnics, 2010(2): 5-7.
［5］赵文虎．某导弹用电点火具防静电技术研究［J］．火工品，200l(3)：24-27. ZHAO W H.Antistatic technology study on an electric igniter which used a missle［J］.Initiators and Pyrotechnics,200l(3)：24-27.
［6］陈飞, 周彬, 秦志春, 等. 半导体桥火工品的防静电和防射频技术［J］. 爆破器材, 2010, 39(3): 28-32.
 CHEN F,ZHOU B, QIN Z C, et al.Anti-electrostatic and anti-RF technology of semiconductor bridge explosive devices［J］.Explosive Materials,2010, 39(3): 28-32.
［7］NOVOTNEY D B, WELCH B M, EVICK D W.Semiconductor bridge development for enhanced ESD and RF immunity［R］.AIAA99-2417,1999.
［8］KING T L, WILLIAM T W. Pin-to-pin electrostatic discharge protection for semiconductor bridges［R］.SAND 2002-2213,2002.
［9］赵鸣. ZnVSb基压敏电阻陶瓷的低温烧结及电性能研究［D］. 西安: 西北工业大学, 2007.
 ZHAO M. The low temperature sintering and electrical property study of ZnVSb based varistor ceramic［D］. Xi’an:Northwestern Polytechnical University, 2007.
［10］左成林，周彬，杜伟强.TVS二极管用于半导体桥静电安全性研究［J］. 爆破器材，2016，45（3）：62-64.
ZUO C L,ZHOU B, DU W Q.Electrostatic safety of semiconductor bridge with external TVS diodes［J］. Explosive Materials,2016，45（3）：62-64.

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备注/Memo

备注/Memo:
收稿日期：2016-01-29
作者简介：刘德虎（1972－）,男，工程师，主要从事火工品及弹药技术研究。E-mail:liuhuustc@126.com
更新日期/Last Update: 2016-09-30