[1]叶丹丹①②,王军②,左成林②,等.平面集成CMCN薄膜型钝感半导体桥芯片的制备与性能[J].爆破器材,2026,55(05):26-32.[doi:10.3969/j.issn.1001-8352.2026.05.004]
　YE Dandan,WANG Jun,ZUO Chenglin,et al.Preparation and Performances of Planar Integrated CMCN Thin-Film Insensitive Semiconductor Bridge Chip[J].EXPLOSIVE MATERIALS,2026,55(05):26-32.[doi:10.3969/j.issn.1001-8352.2026.05.004]
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平面集成CMCN薄膜型钝感半导体桥芯片的制备与性能()

《爆破器材》[ISSN:1001-8352/CN:32-1163/TJ]

卷:
55
期数:
2026年05
页码:
26-32
栏目:
爆炸材料
出版日期:
2026-10-19

文章信息/Info

Title:
Preparation and Performances of Planar Integrated CMCN Thin-Film Insensitive Semiconductor Bridge Chip
文章编号:
7009
作者:
叶丹丹①②; 王军②; 左成林②; 黄寅生①
①南京理工大学化学与化工学院（江苏南京，210094）
②南京峰贺微电子科技有限公司（江苏南京，210094）
Author(s):
YE Dandan①②;  WANG Jun②;  ZUO Chenglin②;  HUANG Yinsheng①
①School of Chemistry and Chemical Engineering，Nanjing University of Science and Technology (Jiangsu Nanjing, 210094)
②Nanjing Fenghe Microelectronics Technology Co., Ltd. (Jiangsu Nanjing, 210094)
关键词:
火工品; 半导体桥; 锰基复合氧化物; 安全性
Keywords:
initiator;  semiconductor bridge;  manganese-based composite oxide;  safety
分类号:
TJ45
DOI:
10.3969/j.issn.1001-8352.2026.05.004
文献标志码:
A
摘要:
针对半导体桥（SCB）电火工品集成化和钝感化要求，设计并制备了一种平面集成锰基复合氧化物(CMCN)薄膜型钝感SCB芯片。研究了平面集成CMCN薄膜型SCB的防护机理、电爆性能和安全性能。结果表明：CMCN薄膜和SCB芯片的工艺兼容性高，制备出的CMCN薄膜常温电阻为2.8 kΩ，电阻和环境温度之间负相关；22 μF、 22 V电容放电激励条件下,SCB和CMCN薄膜型SCB的平均爆发时间和平均爆发能量分别相差0.47 μs和0.01 mJ。安全电流试验表明，封装陶瓷外径为4.7 mm时，SCB电极塞在71 s出现发火情况，而CMCN型SCB电极塞在300 s内均安全。CMCN薄膜能有效提高直径小于4.7 mm的小尺寸SCB火工品的安全性能，且不影响SCB火工品的电爆性能。

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备注/Memo

备注/Memo:
收稿日期：2026-01-20
基金项目：西藏自治区科技计划项目（XZ202401JX0001）
第一作者：叶丹丹（1991—），女，博士研究生，主要从事钝感电火工品的研究。E-mail: 1412363845@qq.com
通信作者：黄寅生（1952—），男，教授，博导，主要从事爆炸力学的研究。E-mail: 623705315@qq.com
更新日期/Last Update: 2026-09-29