[1]黄亦斌,周彬,王军.肖特基二极管防护后SCB静电安全性研究[J].爆破器材,2019,48(03):29-32.[doi:10.3969/j.issn.1001-8352.2019.03.006]
 HUANG Yibin,ZHOU Bin,WANG Jun.Research on the Electrostatic Security of SCB with Schottky Barrier Diodes[J].EXPLOSIVE MATERIALS,2019,48(03):29-32.[doi:10.3969/j.issn.1001-8352.2019.03.006]
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肖特基二极管防护后SCB静电安全性研究()
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《爆破器材》[ISSN:1001-8352/CN:32-1163/TJ]

卷:
48
期数:
2019年03
页码:
29-32
栏目:
基础理论
出版日期:
2019-05-20

文章信息/Info

Title:
Research on the Electrostatic Security of SCB with Schottky Barrier Diodes
文章编号:
5322
作者:
黄亦斌周彬王军
南京理工大学化工学院(江苏南京,210094)
Author(s):
HUANG Yibin ZHOU Bin WANG Jun
School of Chemical Engineering, Nanjing University of Science and Technology (Jiangsu Nanjing, 210094)
关键词:
半导体桥肖特基二极管静电安全性
Keywords:
semiconductor bridge Schottky barrier diodes electrostatic security
分类号:
TJ450; TD235.2+2
DOI:
10.3969/j.issn.1001-8352.2019.03.006
文献标志码:
A
摘要:
为了提高半导体桥(SCB)火工品的静电安全性能,利用肖特基二极管(SBD)对SCB进行静电防护,对防护后的SCB火工品进行静电放电试验研究。研究结果表明:在静电放电条件(25 kV、500 pF、500 Ω)下,防护后的SCB火工品的桥区未烧蚀,电阻未发生明显变化,SCB未损伤。对静电试验后的SCB火工品进行电容发火试验研究,研究结果表明:静电试验后的SCB能够正常发火,SCB的爆发时间与发火能量未产生显著性变化,SCB的电爆性能未受到影响。
Abstract:
In order to improve static safety performance of SCB igniters, Schottky Diodes were used to protect SCB from electrostatic discharge. Results of the electrostatic discharge experiment show that the bridge area has not been ablated, the resistance has not changed significantly, and the SCB has not been damaged under electrostatic discharge conditions of 25kV, 500pF and 500Ω. The results of the capacitive discharge experiment show that the SCB can ignite normally after the electrostatic experiment. In addition, ignition time and energy of SCB do not change significantly, and the electrical explosion performance of SCB is not affected.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期:2019-01-08
第一作者:黄亦斌(1994-),男,硕士研究生,主要从事半导体桥点火研究。E-mail:hybnjust@126.com
通信作者:周彬(1971-),女,博士,副研究员,主要从事半导体桥火工品研究。E-mail:zhoubinnust@126.com
更新日期/Last Update: 2019-05-17