[1]王云鹏①,董晓芬②,王端②,等.Al/Bi2O3含能半导体桥的安全性能研究[J].爆破器材,2026,55(02):8-14.[doi:10.3969/j.issn.1001-8352.2026.02.002]
 WANG Yunpeng,DONG Xiaofen,WANG Duan,et al.Safety Performances of Al/Bi2O3 Energetic Semiconductor Bridge[J].EXPLOSIVE MATERIALS,2026,55(02):8-14.[doi:10.3969/j.issn.1001-8352.2026.02.002]
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Al/Bi2O3含能半导体桥的安全性能研究()

《爆破器材》[ISSN:1001-8352/CN:32-1163/TJ]

卷:
55
期数:
2026年02
页码:
8-14
栏目:
基础理论
出版日期:
2026-04-13

文章信息/Info

Title:
Safety Performances of Al/Bi2O3 Energetic Semiconductor Bridge
文章编号:
6069
作者:
王云鹏董晓芬王端王凯炳
①山西经济管理干部学院(山西经贸职业学院)机电工程系(山西太原,030024)
②中北大学环境与安全工程学院(山西太原,030051)
Author(s):
WANG Yunpeng DONG Xiaofen WANG Duan WANG Kaibing
① Department of Mechanical and Electrical Engineering, Shanxi Institute of Economic Management (Shanxi Institute of Economics and Business) (Shanxi Taiyuan, 030024)
② School of Environment and Safety Engineering, North University of China (Shanxi Taiyuan, 030051)
关键词:
含能薄膜半导体桥Al/Bi2O3安全性能
分类号:
TJ450;TQ560.7
DOI:
10.3969/j.issn.1001-8352.2026.02.002
文献标志码:
A
摘要:
针对半导体桥(SCB)火工品输出能量较低的问题,设计并制备了Al/Bi2O3含能薄膜与SCB集成的含能半导体桥(ESCB)。通过恒流安全试验、电磁辐照试验、静电安全性试验,对其安全性能进行测试;并通过SCB和Al/Bi2O3-ESCB对B/KNO3钝感点火药的点火试验,验证了Al/Bi2O3-ESCB的输出性能。结果表明:所制备的Al/Bi2O3含能薄膜成分均匀,结构平滑,与SCB集成制备的Al/Bi2O3-ESCB安全性能良好;安全电流达到1.2 A,可通过100 MHz(700 V/m)、 400 MHz(700 V/m)、 900 MHz(560 V/m) 3种条件下的电磁辐照,且性能不发生明显变化;静电放电试验不发火,且电阻不发生明显变化。相较于SCB,可明显提升对恒流激励的抵抗能力和点火输出能力。在47 μF、 50 V电容激励时,接触条件下和1.3 mm以内非接触条件下均能可靠点燃B/KNO3钝感点火药。

参考文献/References:

[1]XU J B, ZHOU Y X, SHEN Y, et al. Characteristics of micro energetic semiconductor bridge initiator by depositing Al/MoO3 reactive multilayered films on micro bridge with different bridge size [J]. Sensors and Actuators A: Physical, 2022, 336: 113406.

[2]LI C M, WANG K B, JI X G, et al. Effect of copper in the stabilization of Al/CuO energetic semiconductor bridge [J]. Journal of Applied Physics, 2024, 135(18): 185302.
[3]ZHENG Z L, ZHANG W C, YU C P, et al. Integration of the 3DOM Al/Co3O4 nanothermite film with a semiconductor bridge to realize a high-output micro-energetic igniter [J].Royal Society of Chemistry, 2025, 15: 26583-26600.
[4]YU C P, ZHENG Z L, GU B N, et al. Aluminum/lead tetroxide nanothermites for semiconductor bridge applications [J]. Chemical Engineering Journal, 2023, 451: 138614.
[5]陶禹任,王磊,周彬,等.平面集成TVS二极管对半导体桥火工品换能元性能的影响因素[J].含能材料, 2025, 33(1): 73-81.
TAO Y R, WANG L, ZHOU B, et al. Impact factors of planar integrated TVS diodes on the performance of semiconductor bridge initiator transducers [J]. Chinese Journal of Energetic Materials, 2025, 33(1): 73-81.
[6]彭井泉.Al/MoO3含能薄膜和半导体桥的制备与性能研究[D]. 湘潭: 湘潭大学, 2023.
PENG J Q. Preparation and performance study of Al/MoO3 energy-containing films and semiconductor bridges [D]. Xiangtan: Xiangtan University, 2023.
[7]史安然, 周宇轩, 沈云, 等. 基于Cu阻挡层的Al/CuO含能半导体桥的电爆性能研究[J]. 爆破器材, 2022, 51(5): 1-6.
SHI A R, ZHOU Y X, SHEN Y, et al. Electric explosion performance of Al/CuO energetic semiconductor bridge based on Cu barrier layer [J]. Explosive Materials, 2022, 51(5): 1-6.
[8]王罗凯. 基于Al/CuO换能元MEMS引信传爆系统研究[D].沈阳: 沈阳理工大学, 2022.WANG L K. Research on MEMS fuze detonation transmission system based on Al/CuO converter [D]. Shenyang: Shenyang Ligong University, 2022.
[9]太玉. 基于Al/MoO3多层薄膜的含能半导体桥制备及性能研究 [D]. 南京: 南京理工大学, 2019.
TAI Y. Fabrication and properties of energetic semiconductor bridge based on Al/MoO3 multilayer films [D]. Nanjing: Nanjing University of Science and Technology, 2019.?
[10]王帅. Al/Fe2O3含能半导体桥的制备及电爆性能研究[D]. 哈尔滨: 哈尔滨工业大学, 2016.?
WANG S. Preparation and electro-explosive performance of Al/Fe2O3 energetic semiconductor bridge [D]. Harbin: Harbin Institute of Technology, 2016.
[11]中国兵器工业集团公司. 火工品试验方法 第14部分: 静电放电试验: GJB 5309.14—2004 [S]. 2004.
China North Industries Group Co., Ltd. Test methods of initiating devices——Part 14: electrostatic discharge test: GJB 5309.14—2004 [S]. 2004.
[12]陈光海. 组合电磁防护器件的 SCB 火工品性能研究 [D]. 南京: 南京理工大学, 2019.
CHEN G H. Research on the performance of SCB pyrotechnics with combined electromagnetic protection Devices [D]. Nanjing: Nanjing University of Science and Technology, 2019.
[13]袁玉红, 李军福, 周彬, 等. 半导体桥火工品的防静电与防射频设计[J]. 爆破器材, 2024, 53(1): 30-35.
YUAN Y H, LI J F, ZHOU B, et al. Anti-static and anti-RF design of the semiconductor bridge initiator[J]. Explosive Materials, 2024, 53(1): 30-35.

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备注/Memo

备注/Memo:
收稿日期:2025-08-08
基金项目:山西省高等学校科技创新计划项目(2024L474)
第一作者:王云鹏(1998—),男,硕士,助教,主要从事先进火工品技术和机电一体化的研究。E-mail: wangyunpeng0805@163.com
通信作者:董晓芬(1993—),女,博士,讲师,主要从事先进火工品技术和全电子安保的研究。E-mail: 764753474@qq.com
更新日期/Last Update: 2026-04-10