[1]史安然①②③,周宇轩①②③,沈云④,等.基于Cu阻挡层的Al/CuO含能半导体桥的电爆性能研究[J].爆破器材,2022,51(05):1-6.[doi:10.3969/j.issn.1001-8352.2022.05.001]
　SHI Anran,ZHOU Yuxuan,SHEN Yun,et al.Electric Explosion Performance of Al/CuO Energetic Semiconductor Bridge Based on Cu Barrier Layer[J].EXPLOSIVE MATERIALS,2022,51(05):1-6.[doi:10.3969/j.issn.1001-8352.2022.05.001]
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基于Cu阻挡层的Al/CuO含能半导体桥的电爆性能研究()
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《爆破器材》[ISSN:1001-8352/CN:32-1163/TJ]

卷:
51
期数:
2022年05
页码:
1-6
栏目:
基础理论
出版日期:
2022-10-11

文章信息/Info

Title:
Electric Explosion Performance of Al/CuO Energetic Semiconductor Bridge Based on Cu Barrier Layer
文章编号:
5745
作者:
史安然①②③; 周宇轩①②③; 沈云④; 张伟①②③; 叶迎华①②③; 沈瑞琪①②③
①南京理工大学化学与化工学院（江苏南京，210094）
②微纳含能器件工业和信息化部重点实验室（江苏南京，210094）
③南京理工大学空间推进技术研究所（江苏南京，210094）
④江苏警官学院警察指挥与战术系（江苏南京，210031）
Author(s):
SHI Anran①②③;  ZHOU Yuxuan①②③;  SHEN Yun④;  ZHANG Wei①②③;  YE Yinghua①②③;  SHEN Ruiqi①②③
① School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology (Jiangsu Nanjing, 210094)
② Micro-Nano Energetic Devices Key Laboratory of MIIT (Jiangsu Nanjing, 210094）
③Institute of Space Propulsion, Nanjing University of Science and Technology (Jiangsu Nanjing, 210094）
④Police Command and Tactic Department, Jiangsu Police Institute (Jiangsu Nanjing, 210031）
关键词:
纳米Al/CuO RMFs; 半导体桥; 阻挡层; 电爆特性
Keywords:
nano Al/CuO RMFs;  semiconductor bridge;  barrier layer;  electric explosion characteristic
分类号:
TJ450.3
DOI:
10.3969/j.issn.1001-8352.2022.05.001
文献标志码:
A
摘要:
界面层的反应性是纳米含能复合薄膜(RMFs)制备中的重要因素，直接影响纳米RMFs的反应性能。为了研究纳米Al/CuO RMFs在半导体桥上集成后的电爆性能，采用磁控溅射工艺制备了Al/CuO含能半导体桥（Al/CuO-ESCB）和Al/Cu/CuO含能半导体桥(Al/Cu/CuO-ESCB)，研究了Cu层作为阻挡层对Al/CuO-ESCB电爆过程的影响。结果表明:增加Cu阻挡层可以缩短ESCB的临界激发时间，增加ESCB的燃烧时间。
Abstract:
Reactivity of the interface layer is an important factor in the preparation of nano energetic composite films （RMFs）. Specifically, it directly affects the reaction performance of RMFs. In order to study the electric explosion properties of Al/CuO RMFs integrated on semiconductor bridges, Al/CuO and Al/Cu/CuO energetic semiconductor bridge were fabricated by magnetron sputtering. The effect of Cu layer as the barrier layer on the electric explosion process of Al/CuO energetic semiconductor bridge was examined. Results show that the critical excitation time can be shortened and the combustion time of energetic semiconductor bridge can be increased by adding Cu barrier layer.

参考文献/References:

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备注/Memo

备注/Memo:
收稿日期：2022-07-28
基金项目：国家自然科学基金（12074187）；国防科技重点实验室基金（6142602200101）
第一作者：史安然（1992-），女，博士研究生，主要从事纳米结构含能材料及先进火工品技术研究。E-mail：arshi@njust.edu.cn
通信作者：沈瑞琪（1963-），男，教授，主要从事先进火工品技术及新型含能材料研究。E-mail：rqshen@njust.edu.cn
张伟（1986-），男，副研究员，主要从事先进火工品技术及先进推进技术研究。E-mail：wzhang@njust.edu.cn
更新日期/Last Update: 2022-10-04