[1]付帅,朱朋,叶迎华,等.基于Al/MoOx纳米复合薄膜的含能半导体桥研究[J].爆破器材,2013,42(06):1-6.[doi:10.3969/j.issn.1001-8352.2013.06.001]
　FU Shuai,ZHU Peng,YE Yinghua,et al.Characterization of Energetic Semiconductor Bridge Realized by Integrating Al/MoOx Nano Multilayer Films[J].EXPLOSIVE MATERIALS,2013,42(06):1-6.[doi:10.3969/j.issn.1001-8352.2013.06.001]
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基于Al/MoOx纳米复合薄膜的含能半导体桥研究()
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《爆破器材》[ISSN:1001-8352/CN:32-1163/TJ]

卷:
42
期数:
2013年06
页码:
1-6
栏目:
基础理论
出版日期:
2013-12-20

文章信息/Info

Title:
Characterization of Energetic Semiconductor Bridge Realized by Integrating Al/MoOx Nano Multilayer Films
文章编号:
4654
作者:
付帅; 朱朋; 叶迎华; 李东乐; 沈瑞琪
南京理工大学化工学院（江苏南京，210094）
Author(s):
FU Shuai;  ZHU Peng;  YE Yinghua;  LI Dongle;  SHEN Ruiqi
School of Chemical Engineering, Nanjing university of Science and Technology (Jiangsu Nanjing, 210094)
关键词:
Al/MoOx纳米复合薄膜; 含能半导体桥; 点火起爆特性; 等离子体测温
Keywords:
Al/MoOx nano multilayer films;  Energetic semiconductor bridge;  Ignition character;  Plasma temperature
分类号:
TJ51 TJ450.1
DOI:
10.3969/j.issn.1001-8352.2013.06.001
文献标志码:
A
摘要:
使用微细加工和磁控溅射技术将Al/MoOx纳米复合薄膜集成于半导体桥（SCB），制成含能半导体桥SCB-Al/MoOx以提高SCB的点火能力。薄膜的SEM、DCS和XPS结果表明，复合薄膜成膜质量好，层状结构清晰，放热量可达3200 J/g，达到理论值的68%（理论放热量为4703 J/g），MoOx薄膜含有32％的MoO3、37％的Mo2O5以及31％的MoO2。电容激励发火实验表明：相同激发条件下， SCB-Al/MoOx反应终止时间较SCB显著缩短，能量输出效率高于SCB，发火时溅射出的火花量明显增多，持续时间显著延长，使用原子发射双谱线测温法得到的等离子体温度亦高于SCB。
Abstract:
An energetic semiconductor bridge, SCB-Al/MoOx, was made using Al/MoOx nano multilayer films integrated with semiconductor bridge (SCB) by micro machining technology and magnetron sputtering technology, and accordingly its ignition capacity was enhanced. The Al/MoOx films were identified by SEM, DSC and XPS. Results show that distinct Al/MoOx multilayer films are formed by means of sputter deposited on a layered geometry. The heat generation could reach to 3200 J/g, which is 68% of the theoretical value (4703 J/g). MoOx films contain MoO3 (32%), Mo2O5 (37%) and MoO2 (31%), respectively. In capacitance triggered firing experiments, the terminal time of SCB-Al/MoOx reaction is shorter, while the energy output efficiency is higher than those of SCB. Moreover, sparks in the fire increase obviously, and their duration time is extended. The exothermic reactions in Al/MoOx films sustain SCB to generate plasma of higher temperatures.

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相似文献/References:

[1]官震,朱朋,叶迎华,等.Al/MoO3薄膜厚度对含能半导体桥发火特性的影响[J].爆破器材,2017,46(04):1.[doi:10.3969/j.issn.1001-8352.2017.04.001]
　GUAN Zhen,ZHU Peng,YE Yinghua,et al.Influence of Film Thickness of Al/MoO3 on Ignition Performance of Energetic Semiconductor Bridge[J].EXPLOSIVE MATERIALS,2017,46(06):1.[doi:10.3969/j.issn.1001-8352.2017.04.001]

备注/Memo

备注/Memo:
收稿日期：2013-06-04
基金项目：国家自然科学基金资助项目（51201091）
作者简介：付 帅（1989~），男，硕士研究生，主要从事含能材料的研究。
通信作者：朱 朋（1978~），男，助理研究员，主要从事火工技术与薄膜材料研究。
更新日期/Last Update: 2014-01-03